薄膜(thin film)其實是一個很好的領域, 很基本有物理又應用廣, 很像在搞藝術, 晶格架構, 群論詮釋, 這幾年固態物理學和薄膜技術發展的關聯實在太密切.
時間：98年7月30日(週四)上午10:30
地點：理學院 B101 室
題目：Electrochemical thin film growth: Initial steps and basic processes
Electrochemical thin film growth: Initial steps and basic processes
Institute of Physical and Theoretical Chemistry, University of Bonn, Wegelerstr. 12, 53115 Bonn, Germany
Ultrathin films of various materials and different properties play an ever increasing importance in modern electronic technologies. Multilayers of insulating, semiconducting and metallic films are the basis of 3D-integrated circuitry. Self-assembled layers of functionalized molecules may be the basis for “molecular electronics”. The formation of these films requires the precise control and, thus, characterization of their growth process. While so far the majority of these processes is based on chemical and physical vapour deposition, in recent years also electrochemical deposition methods are applied. Key words in this respect are “damascene process” and “electrochemical atomic layer epitaxy (ECALE)”. Nowadays, methods are available which permit an in-situ characterization (i.e. in solution) of properties and processes at solid/liquid interfaces with the same precision as we are used to from ultrahigh vacuum (UHV) based studies.
In this lecture studies of the formation and atomic-scale characterization of ultrathin inorganic as well as organic films will be discussed based on data from voltametric measurements in combination with in-situ electrochemical scanning tunneling microscopy (EC-STM), in-situ X-ray diffraction (XRD) and ex-situ X-ray photoelectron spectroscopy using synchrotron radiation (S-XPS). Specifically the growth of metal- (Cu/Au(111)), semiconductor- (CuS/Au(100), CdS/Cu(111)), insulator- (CuI/Cu(111)) and organic (porphyrin) layers will be addressed. The results demonstrate the state of in-situ solid/liquid interface characterization.
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